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| PHOTODIODE Si PIN photodiode S8385/S8729 series SIP plastic package S8385/S8729 series is a family of large area Si PIN photodiodes molded into a miniature plastic SIP package (75 % smaller in cubic volume than conventional types). Also available are lead forming types that save space when mounted on a PC board. Features Applications l Small plastic package: 4 x 4.8 x 1.8 t mm l 2-pin SIP lead type (lead length: 4.9 mm) l High sensitivity, high speed response l 2 types of spectral response characteristics available S8385, S8729, S8729-10: for visible to infrared range (=320 to 1100 nm) S8385-04, S8729-04: for infrared (=760 to 1100 nm) l Lead forming type also available (S8729-10) l Active area S8385 series: 2 x 2 mm S8729 series: 2 x 3.3 mm l Barcode scanners l Spatial light transmission l Optical switches l Laser radar, etc. s General ratings / Absolute maximum ratings Type No. Dimensional outline Package Active area size (mm) S8385 S8385-04 S8729 S8729-04 S8729-10 2x2 Plastic 2 x 3.3 6.6 Effective active area (mm2) 4 20 50 -25 to +85 -40 to +100 Reverse voltage VR Max. (V) Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mV) (C) (C) s Electrical and optical characteristics Spectral response range Peak sensitivity wavelength p Photo sensitivity S (A/W) Short circuit current Isc 100 lx Dark current ID VR=5 V Cut-off frequency Terminal Te mperature capacitance fc coefficient of VR=5 V Ct ID =780 n m VR=5 V TCID RL=50 f=1 MHz -3 dB (MHz) (pF) 12 1.15 0.2 2.0 25 16 Type No. NEP =p p 660 nm 780 nm 830 nm S8385 S8385-04 S8729 S8729-04 S8729-10 (nm) 320 to 1100 760 to 1100 320 to 1100 760 to 1100 320 to 1100 (nm) 0.56 960 0.4 0.48 0.5 0.44 0.7 0.45 0.55 0.6 0.68 0.52 0.7 0.45 0.55 0.6 (A) 4.2 2.8 7.5 5 7.5 Typ. Max. (nA) (nA) (tim es/ C) 0.1 1.0 (W/Hz1/2) 1.0 x 10-14 1.1 x 10-14 1.2 x 10-14 1.1 x 10-14 1 Si PIN photodiode s Spectral response 0.8 0.7 S8729-04 QE=100 % 0.6 0.5 0.4 0.3 S8385 0.2 0.1 0 200 1 pA 0.01 S8729 S8729-10 1 nA (Typ. Ta=25 C) 10 nA S8385/S8729 series (Typ. Ta=25 C) s Dark current vs. reverse voltage PHOTO SENSITIVITY (A/W) DARK CURRENT S8729, S8729-04, S8729-10 S8385-04 100 pA S8385, S8385-04 10 pA 400 600 800 1000 1200 0.1 1 10 100 WAVELENGTH (nm) KPINB0271EB REVERSE VOLTAGE (V) KPINB0273EA s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 C, f=1 MHz) TERMINAL CAPACITANCE 100 pF S8729, S8729-04, S8729-10 10 pF S8385, S8385-04 1 pF 100 fF 0.1 1 10 100 REVERSE VOLTAGE (V) KPINB0272EA s Dimensional outlines (unit: mm) S8385, S8385-04, S8729, S8729-04 5.0 MAX. (INCLUDING BURR) 4.7 * S8729-10 1.8 5.0 MAX. (INCLUDING BURR) 0.8 ACTIVE AREA 2 x 3.3 0.45 (2 x) 10 (2 x) 10 (2 x) 5 4.2 0.2 (INCLUDING BURR) 4.2 0.2 (INCLUDING BURR) 0.45 4.0 * 2.6 0.2 PHOTOSENSITIVE SURFACE 2.0 DEPTH 0.15 MAX. 4.0 * 2.0 DEPTH 0.15 MAX. (2 x) 10 5 KPINA0091EB (0.8) (1.25) (2 x) 0.4 PHOTOSENSITIVE SURFACE 5.0 MAX. (INCLUDING BURR) (2 x) 4.5 0.4 2.54 0.8 0.25 4.7 * (2 x) 10 Tolerance unless otherwise noted: 0.1, 2 Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2 5.0 MAX. (INCLUDING BURR) 4.7 * (2 x) 10 Symbol a S8385 S8385-04 2x2 S8729 S8729-04 2 x 3.3 (2 x) 5 (2 x) 0.5 (2 x) 0.4 (2 x) 5 4.8 * Tolerance unless otherwise noted: 0.1, 2 Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2 KPINA0090EA 2.54 4.8 * Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 (2 x) 0.25 (2 x) 0.5 4.9 0.25 0.5 (2 x) 5 ACTIVE AREA a 1.8 4.7 * 0.5 Cat. No. KPIN1064E04 Apr. 2006 DN 2 |
Price & Availability of S8729-04
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